Significant Progress Has been Made in Research of High-performance Nanometer-scale Transistor
Website news (Reporter: Wu Xuan) Recently, based on cooperation with other research groups, the research group led by Professor Liao Lei of School of Physics and Technology has made significant progress on development of nanometer material-based high-performance transistor. They have published 5 papers successively in SCI journals with impact factor larger than 10, which draws extensive attention of peers at home and abroad.
Transistor is a kind of semiconductor device. With high response speed and high accuracy, it’s a basic building block in modern electronic circuit, and is used extensively in circuit with digital and analogue function. The semiconductor channel layer is of great importance for the performance and the specific function of transistor, in which, noncrystalline oxide-based semiconductor material draws much attention of researchers because of its potential application value. The researchers are mainly focusing on improving its carrier mobility, to improve the response speed of device, and apply it in high-frequency device field.
In 2011, through mixing moderate single-walled carbon nanotubes into noncrystalline oxide, the research group led by Liao Lei improved its migration rate obviously. In recent researches, the research group produced transparent optical sensor which has response to red, green and blue light taking advantage of the high grade of transparency of noncrystalline oxide, which can be used for high-resolution detection of light stripe. The result is published in the famous journal of the world-Advanced Materials.
Additionally, the research group has also made progress in research on one-dimensional oxide nanometer-scale transistor. Through reasonable composition modulation of indium oxide nanowire, they achieved a transformation from depletion mode to enhancement mode, and decreased effectively the power dissipation of device. Meanwhile, they achieved selective detection of reducing gases, and obtained a "lock-and-key" chemical sensor applying for certain single reducing gas.
As the research group has made a series of contribution in oxide nanometer material-based transistor, the famous magazine of nanometer material research - Nano Today invited Liao Lei to write a summarized thesis, and organize as a guest editor a special issue of flexible electronics in the magazine - Journal of Materials Chemistry. All of these researches have laid a foundation for further development and application of large-area high-performance thin-film field-effect transistors and corresponding radio-frequency devices.